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ATOMIC LAYER DEPOSITION (ALD), BENEQ TFS-500

Year of Manufacture and Installation:

2006 / 2006

Description:

ALD equipments are designed to the oxide and nitride film deposition. In Micronova there is two ALD equipments (ALD1 and ALD2) in the clean room finger F9. The equipments are build on same frame but accessories are different. Both equipments are in common use. Micronova ALDs are mainly used to grow

• ICP-RIE etch stop layers (Al2O3)
• Iinsulating layers (Al2Oe, HfO2)
• Semiconductor materials (ZnO, TiN)
• Optical thin film applications as filter structures (TiO2, Al2O3)
• Novel materials and applications

Key Features and Accessories:

ALD1

• Four liquid precursors: H2O, TMA, TiCl4 and DEZn
• Three precursor gases: NH3, O2 and O3
• Two possibility for the carrier gas: N2 or Ar
• Two heated precursor containers: HS-200 and HS-500
• Plasma ALD reactor. Operating temperature from 20 to 450 °C
• Water cooling

ALD2

• Three liquid precursors: H2O, TMA and TiCl4
• Three precursor gases: NH3, O2 and O3
• Nitrogen as the carrier gas
• Two heated precursor containers: HS-200 and HS-500
• Operating temperature from 20 to 450 °C
• Water cooling

 

Key Specifications:

• Maximum wafer size 200 mm

Substrate Size:

Sample size < 200 mm wafer. Also thicker samples can be coated up to 15 mm thickness with lifting ring.

Allowed Materials:

• Si
• Compound semiconductors (such as GaN, InP, GaAs)
• Polymers (such as SU-8, AZ-resists, PMMA)
• Some metals such as (Al, Cr, Ge, Ti) 
• Glasses (such as soda lime glass)

Forbidden Materials:

• Noble metals (such as Au, Ag, Pt, Cu, Pd) 
• Heavy metals (such as Cd, Pb, Zn)
• Clean room incompatible materials (such as silicones, wood, paper etc.)

Availability and Cost:

Availability Class ALD1: R 
Availability Class ALD2: F 
Price Category: High

Name, Model and Manufacturer:

Atomic layer deposition equipment,
TFS-500,
Beneq

Location:

Nanofab F9